Methods of Forming Wiring Structures and Methods of Fabricating Semiconductor Devices

• Main Authors: RHA SANG-HO, LEE NAE-IN, BAEK JONG-MIN, YOU WOO-KYUNG, AHN SANG-HOON
• Format: Patent
• Language: English
• Published: 09.07.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Methods of forming a wiring structure are provided including forming an insulating interlayer on a substrate and forming a sacrificial layer on the insulating interlayer. The sacrificial layer is partially removed to define a plurality of openings. Wiring patterns are formed in the openings. The sacrificial layer is transformed into a modified sacrificial layer by a plasma treatment. The modified sacrificial layer is removed by a wet etching process. An insulation layer covering the wiring patterns is formed on the insulating interlayer. The insulation layer defines an air gap therein between neighboring wiring patterns.