SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

A method of fabricating a semiconductor device is provided. A substrate having a first region and a second region is provided. A plurality of stacked gate structures are formed on the substrate of the first region. Each stacked gate structure includes a tunneling dielectric layer, a charge storage l...

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Bibliographic Details
Main Authors CHEN HUNGI, YIH CHENG-MING, CHU TA-KANG
Format Patent
LanguageEnglish
Published 09.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor device is provided. A substrate having a first region and a second region is provided. A plurality of stacked gate structures are formed on the substrate of the first region. Each stacked gate structure includes a tunneling dielectric layer, a charge storage layer, an inter-gate dielectric layer, and a control gate. A gap exists between two adjacent stacked gate structures. At least one gate structure is formed on the substrate of the second region. A liner layer is conformally formed on the substrate. A dielectric layer covering the liner layer is formed in the second region. A metal silicide layer is formed on the top portion of the gate structure and on the substrate on both sides of the gate structure. A contact process is performed to form a plurality of contacts connected to the metal silicide layer.
Bibliography:Application Number: US201414278953