Light-Emitting Diode and Fabrication Method Thereof
A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and fir...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
02.07.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer, including three structure layers; a second metal barrier layer over the adhesive layer with alternating second current spreading layers and metal barrier layers; and a metal electrode layer over the second metal barrier layer. |
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Bibliography: | Application Number: US201514643394 |