Light-Emitting Diode and Fabrication Method Thereof

A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and fir...

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Bibliographic Details
Main Authors LIU CHUANGUI, YIN LINGFENG, LIN SUHUI, OU YIDE, ZHENG JIANSEN, WANG QING
Format Patent
LanguageEnglish
Published 02.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer, including three structure layers; a second metal barrier layer over the adhesive layer with alternating second current spreading layers and metal barrier layers; and a metal electrode layer over the second metal barrier layer.
Bibliography:Application Number: US201514643394