SILICON WAVEGUIDES WITH EMBEDDED ACTIVE CIRCUITRY

The present disclosure discloses silicon waveguides with embedded active circuitry fabricated from silicon wafers utilizing photolithographic microfabrication techniques to define waveguide structures and embedded circuit recesses for receiving integrated circuitry. The method of fabricating the wav...

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Bibliographic Details
Main Authors MIHAILOVICH ROBERT E, DENATALE JEFFREY F, BORWICK, III ROBERT L, STUPAR PHILIP A
Format Patent
LanguageEnglish
Published 02.07.2015
Subjects
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Summary:The present disclosure discloses silicon waveguides with embedded active circuitry fabricated from silicon wafers utilizing photolithographic microfabrication techniques to define waveguide structures and embedded circuit recesses for receiving integrated circuitry. The method of fabricating the waveguides utilizes a double masking layer, one layer of which at least partially defines at least one waveguide and the other layer of which at least partially defines the at least one waveguide and at least one embedded circuit recess. The photolithographic microfabrication techniques are sufficiently precise for the required small structural features of high frequency waveguides and the double masking layer allows the method to be completed more efficiently. The basic fabrication method may be extended to provide batch arrays to mass produce silicon waveguide devices.
Bibliography:Application Number: US201514657020