GATE-CONTROLLED P-I-N SWITCH WITH A CHARGE TRAPPING MATERIAL IN THE GATE DIELECTRIC AND A SELF-DEPLETED CHANNEL

The subject disclosure presents power semiconductor devices, and methods for manufacture thereof, with a low on-state voltage drop and a low turn-off energy. In an aspect, a power semiconductor device is provided that embodies a normally off trench gate-controlled p-i-n switch with a charge trapping...

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Bibliographic Details
Main Authors SIN JOHNNY KIN ON, ZHOU XIANDA
Format Patent
LanguageEnglish
Published 04.06.2015
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:The subject disclosure presents power semiconductor devices, and methods for manufacture thereof, with a low on-state voltage drop and a low turn-off energy. In an aspect, a power semiconductor device is provided that embodies a normally off trench gate-controlled p-i-n switch with a charge trapping material in the gate dielectric and a self-depleted channel.
Bibliography:Application Number: US201414511569