Methods for Producing a Tunnel Field-Effect Transistor

A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods.

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Bibliographic Details
Main Authors TEWS HELMUT HORST, KAKOSCHKE RONALD
Format Patent
LanguageEnglish
Published 21.05.2015
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Summary:A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods.
Bibliography:Application Number: US201514591228