METHODS FOR BARRIER INTERFACE PREPARATION OF COPPER INTERCONNECT
A method is provided, including the following method operations: depositing a metallic barrier layer to line a copper interconnect structure by a dry process in an integrated system configured to operate a mixture of dry and wet processes; depositing the functionalization layer over the metallic bar...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
14.05.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A method is provided, including the following method operations: depositing a metallic barrier layer to line a copper interconnect structure by a dry process in an integrated system configured to operate a mixture of dry and wet processes; depositing the functionalization layer over the metallic barrier layer by a wet process in the integrated system; and, depositing the copper layer over the functionalization layer in the copper interconnect structure by a wet process in the integrated system after the functionalization layer is deposited over the metallic barrier layer, wherein the material used for the functionalization layer comprises a complexing group with at least two ends, one end of the complexing group forming a bond with the metallic barrier layer and another end of the complexing group forming a bond with the copper layer. |
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Bibliography: | Application Number: US201414558548 |