METHODS FOR BARRIER INTERFACE PREPARATION OF COPPER INTERCONNECT

• Main Authors: DORDI YEZDI, YOON HYUNGSUK ALEXANDER, REDEKER FRITZ C, BOYD JOHN
• Format: Patent
• Language: English
• Published: 14.05.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method is provided, including the following method operations: depositing a metallic barrier layer to line a copper interconnect structure by a dry process in an integrated system configured to operate a mixture of dry and wet processes; depositing the functionalization layer over the metallic barrier layer by a wet process in the integrated system; and, depositing the copper layer over the functionalization layer in the copper interconnect structure by a wet process in the integrated system after the functionalization layer is deposited over the metallic barrier layer, wherein the material used for the functionalization layer comprises a complexing group with at least two ends, one end of the complexing group forming a bond with the metallic barrier layer and another end of the complexing group forming a bond with the copper layer.