LINE PATTERN COLLAPSE MITIGATION THROUGH GAP-FILL MATERIAL APPLICATION
Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
07.05.2015
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Subjects | |
Online Access | Get full text |
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Summary: | Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching. |
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Bibliography: | Application Number: US201414323664 |