SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

An N type well (NW) is formed over a prescribed depth from a main surface of a semiconductor substrate (SUB), and a P type well (PW) and an N type drain region (ND) are formed in the N type well (NW). An N type source region (NS), an N+ type source region (NNS), and a P+ type impurity region (BCR) a...

Full description

Saved in:
Bibliographic Details
Main Author KUBO SHUNJI
Format Patent
LanguageEnglish
Published 30.04.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An N type well (NW) is formed over a prescribed depth from a main surface of a semiconductor substrate (SUB), and a P type well (PW) and an N type drain region (ND) are formed in the N type well (NW). An N type source region (NS), an N+ type source region (NNS), and a P+ type impurity region (BCR) are formed in the P type well (PW). The N type source region (NS) is formed on a region situated directly below the N+ type source region (NNS), and not on a region situated directly below the P+ type impurity region (BCR), and the P+ type impurity region (BCR) is in direct contact with the P type well (PW).
Bibliography:Application Number: US201514594034