THIN FILM TRANSISTOR, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME

A thin film transistor includes a bottom gate electrode, a top gate electrode and an active pattern. The top gate electrode includes a transparent conductive material and overlaps with the bottom gate electrode. A boundary of the bottom gate electrode and a boundary of the top gate electrode are coi...

Full description

Saved in:
Bibliographic Details
Main Authors KANG SU-HYOUNG, KIM DONG-JO, KHANG YOON-HO, LEE YONG-SU
Format Patent
LanguageEnglish
Published 23.04.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A thin film transistor includes a bottom gate electrode, a top gate electrode and an active pattern. The top gate electrode includes a transparent conductive material and overlaps with the bottom gate electrode. A boundary of the bottom gate electrode and a boundary of the top gate electrode are coincident with each other in a cross-sectional view. The active pattern includes a source portion, a drain portion and a channel portion disposed between the source portion and the drain portion. The channel portion overlaps with the bottom gate electrode and the top gate electrode.
Bibliography:Application Number: US201414452261