NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

A nonvolatile memory device includes a substrate; a channel layer projecting from a surface of the substrate, in a direction perpendicular to the surface; a tunnel dielectric layer surrounding the channel layer; a plurality of interlayer dielectric layers and a plurality of control gate electrodes a...

Full description

Saved in:
Bibliographic Details
Main Authors SHEEN DONG-SUN, PYI SEUNG-HO, WHANG SUNG-JIN, KIM MIN-SOO
Format Patent
LanguageEnglish
Published 09.04.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A nonvolatile memory device includes a substrate; a channel layer projecting from a surface of the substrate, in a direction perpendicular to the surface; a tunnel dielectric layer surrounding the channel layer; a plurality of interlayer dielectric layers and a plurality of control gate electrodes alternately formed along the channel layer; floating gate electrodes interposed between the tunnel dielectric layer and the plurality of control gate electrodes, the floating gate electrodes comprising a metal-semiconductor compound; and a charge blocking layer interposed between each of the plurality of control gate electrodes and each of the plurality of floating gate electrodes.
Bibliography:Application Number: US201414572434