FINFET WITH RELAXED SILICON-GERMANIUM FINS
A method of forming a semiconductor structure includes forming a first fin in a p-FET device region of a semiconductor substrate and a second fin in an n-FET device region of the semiconductor substrate substantially parallel to the first fin. The first fin and the second fin each comprise a straine...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
09.04.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A method of forming a semiconductor structure includes forming a first fin in a p-FET device region of a semiconductor substrate and a second fin in an n-FET device region of the semiconductor substrate substantially parallel to the first fin. The first fin and the second fin each comprise a strained semiconductor material. Next, the second fin is amorphized to form a relaxed fin by implanting ions into the second fin while protecting the first fin. |
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Bibliography: | Application Number: US201314047090 |