FINFET WITH RELAXED SILICON-GERMANIUM FINS

A method of forming a semiconductor structure includes forming a first fin in a p-FET device region of a semiconductor substrate and a second fin in an n-FET device region of the semiconductor substrate substantially parallel to the first fin. The first fin and the second fin each comprise a straine...

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Bibliographic Details
Main Authors STOKER MATTHEW W, SCHEPIS DOMINIC J, BEDELL STEPHEN W
Format Patent
LanguageEnglish
Published 09.04.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a semiconductor structure includes forming a first fin in a p-FET device region of a semiconductor substrate and a second fin in an n-FET device region of the semiconductor substrate substantially parallel to the first fin. The first fin and the second fin each comprise a strained semiconductor material. Next, the second fin is amorphized to form a relaxed fin by implanting ions into the second fin while protecting the first fin.
Bibliography:Application Number: US201314047090