FOCUSED ION BEAM LOW KV ENHANCEMENT
The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and co...
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Main Author | |
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Format | Patent |
Language | English |
Published |
26.03.2015
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size. |
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Bibliography: | Application Number: US201414565051 |