CHEMICAL VAPOR DEPOSITED FILM FORMED BY PLASMA CVD METHOD

A chemical vapor deposited film includes silicon atoms, oxygen atoms, carbon atoms, and hydrogen atoms. The chemical vapor deposited film is formed by a plasma CVD method such that the concentration of the oxygen atoms is 10-35% by element.

Saved in:
Bibliographic Details
Main Authors FUJIMOTO TAKAYOSHI, YAMASHITA MASAMICHI
Format Patent
LanguageEnglish
Published 12.03.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A chemical vapor deposited film includes silicon atoms, oxygen atoms, carbon atoms, and hydrogen atoms. The chemical vapor deposited film is formed by a plasma CVD method such that the concentration of the oxygen atoms is 10-35% by element.
Bibliography:Application Number: US201314382823