SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an isolation structure formed in a substrate to define an active region of the substrate. The active region has a field plate region therein. A step gate dielectric structure is formed on the su...

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Bibliographic Details
Main Authors SONG CHIEN-HSIEN, CHEN SUE-YI, HUANG CHIH-JEN
Format Patent
LanguageEnglish
Published 19.02.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an isolation structure formed in a substrate to define an active region of the substrate. The active region has a field plate region therein. A step gate dielectric structure is formed on the substrate in the field plate region. The step gate dielectric structure includes a first layer of a first dielectric material and a second layer of the dielectric material, laminated vertically to each other. The first and second layers of the first dielectric material are separated from each other by a second dielectric material layer. An etch rate of the second dielectric material layer to an etchant is different from that of the second layer of the first dielectric material. A method for forming a semiconductor device is also disclosed.
Bibliography:Application Number: US201313967988