NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

According to an aspect of the invention, a first insulating layer is buried in a first trench provided in at least one of an interstice between first and second semiconductor pillars, a side surface portion of the first semiconductor pillar opposed to the second semiconductor pillar, and a side surf...

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Bibliographic Details
Main Authors FUKUZUMI YOSHIAKI, KATSUMATA RYOTA, KONNO ATSUSHI
Format Patent
LanguageEnglish
Published 05.02.2015
Subjects
ELECTRICITY
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Summary:According to an aspect of the invention, a first insulating layer is buried in a first trench provided in at least one of an interstice between first and second semiconductor pillars, a side surface portion of the first semiconductor pillar opposed to the second semiconductor pillar, and a side surface portion of the second semiconductor pillar opposed to the first semiconductor pillar. A first trench penetrates each stack from an uppermost portion of the stack to a first conductive layer in a lowermost portion of the stack. The first trench is arranged away from a first connection portion. Each of the first conductive layers in contact with the first insulating layer includes a silicide layer.
Bibliography:Application Number: US201414197427