BACKSCATTERING FOR LOCALIZED ANNEALING

A method of fabricating an electronic apparatus includes forming an active layer over a wafer, forming a backscatter layer over the wafer, and directing radiation toward the wafer to anneal the active layer. The backscatter layer is not transparent to the radiation, more reflective than absorptive o...

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Bibliographic Details
Main Author THEODORE NIRMAL DAVID
Format Patent
LanguageEnglish
Published 22.01.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating an electronic apparatus includes forming an active layer over a wafer, forming a backscatter layer over the wafer, and directing radiation toward the wafer to anneal the active layer. The backscatter layer is not transparent to the radiation, more reflective than absorptive of the radiation, and positioned such that the backscatter layer inhibits exposure of the wafer to the radiation apart from the active layer.
Bibliography:Application Number: US201313945746