SEMICONDUCTOR DEVICE

In a current-prioritized IGBT, a collector conductive layer is connected to one collector active region included in a collector region by a plurality of contacts. The number of contacts through which the collector conductive layer is connected to the one collector active region is larger than the nu...

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Bibliographic Details
Main Authors TSUJIUCHI MIKIO, NITTA TETSUYA
Format Patent
LanguageEnglish
Published 15.01.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a current-prioritized IGBT, a collector conductive layer is connected to one collector active region included in a collector region by a plurality of contacts. The number of contacts through which the collector conductive layer is connected to the one collector active region is larger than the number of contacts through which the emitter conductive layer is connected to one base active region included in a base region.
Bibliography:Application Number: US201214378720