ION BEAM PROCESSING OF SIC FOR FABRICATION OF GRAPHENE STRUCTURES

A method of preparing graphene on a SiC substrate includes bombarding a surface of the SiC substrate with ions and annealing a volume of the SiC substrate at the bombarded surface to promote agglomeration of carbon at the bombarded surface to form one or more layers of graphene at that surface. The...

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Bibliographic Details
Main Authors APPLETON BILL R, LEMAITRE MAXIME G, TONGAY SEFAATTIN, GILA BRENT PAUL
Format Patent
LanguageEnglish
Published 08.01.2015
Subjects
CHEMISTRY
COMPOUNDS THEREOF
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
INORGANIC CHEMISTRY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
METALLURGY
NANOTECHNOLOGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
TRANSPORTING
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Summary:A method of preparing graphene on a SiC substrate includes bombarding a surface of the SiC substrate with ions and annealing a volume of the SiC substrate at the bombarded surface to promote agglomeration of carbon at the bombarded surface to form one or more layers of graphene at that surface. The ions can be Si, C, or other ions such as Au. The annealing can be carried out using a thermal source of heating or by irradiation with at least one laser beam or other high energy beam.
Bibliography:Application Number: US201214236789