PNP BIPOLAR JUNCTION TRANSISTOR FABRICATION USING SELECTIVE EPITAXY

Lateral PNP bipolar junction transistors and design structures for a lateral PNP bipolar junction transistor. An emitter and a collector of the lateral PNP bipolar junction transistor are comprised of p-type semiconductor material that is formed by a selective epitaxial growth process. The source an...

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Bibliographic Details
Main Authors HARAME DAVID L, LIU QIZHI
Format Patent
LanguageEnglish
Published 08.01.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Lateral PNP bipolar junction transistors and design structures for a lateral PNP bipolar junction transistor. An emitter and a collector of the lateral PNP bipolar junction transistor are comprised of p-type semiconductor material that is formed by a selective epitaxial growth process. The source and drain each directly contact a top surface of a device region used to form the emitter and collector. A base contact may be formed on the top surface and overlies an n-type base defined within the device region. The emitter is laterally separated from the collector by the base contact. Another base contact may be formed in the device region that is separated from the other base contact by the base.
Bibliography:Application Number: US201414497579