UNIFORM HEIGHT REPLACEMENT METAL GATE

A method of manufacturing a semiconductor structure includes forming a raised source-drain region in a semiconductor substrate adjacent to a dummy gate and forming a chemical mechanical polish (CMP) stop layer over the gate structure and above a top surface of the semiconductor substrate. A first IL...

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Bibliographic Details
Main Authors TRAN CUNG D, HALL LINDSEY, SARDESAI VIRAJ Y
Format Patent
LanguageEnglish
Published 08.01.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor structure includes forming a raised source-drain region in a semiconductor substrate adjacent to a dummy gate and forming a chemical mechanical polish (CMP) stop layer over the gate structure and above a top surface of the semiconductor substrate. A first ILD layer is formed above the CMP stop layer. The first ILD layer is removed to a portion of the CMP stop layer located above the gate structure and a portion of the CMP stop layer located above the gate structure is also removed to expose the dummy gate. The dummy gate is replaced with a metal gate and the metal gate is polished until the CMP stop layer located above the raised source-drain region is reached.
Bibliography:Application Number: US201313933203