METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR THIN FILM AND METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR DEVICE USING THE SAME

A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single cry...

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Bibliographic Details
Main Authors LEE SANG DON, LEE HO CHUL, YOON SUK HO, LEE KEE WON, SEO JONG UK, LEE KEON HUN, KIM MIN HO
Format Patent
LanguageEnglish
Published 18.12.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.
Bibliography:Application Number: US201414250070