IN-SITU HARDMASK GENERATION

In some examples, a process to generate an in-situ hardmask layer on porous dielectric materials using the densifying action of a plasma in conjunction with a sacrificial polymeric filler, the latter which enables control of the hardmask thickness as well as a well-defined interface with the underly...

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Bibliographic Details
Main Authors DUBOIS GERAUD JEAN-MICHEL, VOLKSEN WILLI, FROT THEO J, MAGBITANG TEDDIE P
Format Patent
LanguageEnglish
Published 18.12.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In some examples, a process to generate an in-situ hardmask layer on porous dielectric materials using the densifying action of a plasma in conjunction with a sacrificial polymeric filler, the latter which enables control of the hardmask thickness as well as a well-defined interface with the underlying ILD.
Bibliography:Application Number: US201313919725