MgO-Based Coating for Electrically Insulating Semiconductive Substrates and Production Method Thereof

• Main Authors: PRENE PHILIPPE, BONDOUX CÉLINE, BELLEVILLE PHILIPPE, JERISIAN ROBERT
• Format: Patent
• Language: English
• Published: 13.11.2014
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CHEMISTRY; COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS; CONDUCTORS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INORGANIC CHEMISTRY; INSULATORS; METALLURGY; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SEMICONDUCTOR DEVICES

The present invention relates to a magnesium oxide-based (MgO) inorganic coating intended to electrically insulate semiconductive substrates such as silicon carbide (SiC), and to a method for producing such an insulating coating. The method of the invention comprises the steps of preparing a treatment solution of at least one hydrolysable organomagnesium compound and/or of at least one hydrolysable magnesium salt, capable of forming a homogeneous polymer layer of magnesium oxyhydroxide by hydrolysis/condensation reaction with water; depositing the treatment solution of the hydrolysable organomagnesium compound or of the hydrolysable magnesium salt, onto a surface to form a magnesium oxide-based layer; and densifying the layer formed at a temperature of less than or equal to 1000° C.