CONDUCTIVE LAYERS FOR HAFNIUM SILICON OXYNITRIDE FILMS

Electronic apparatus and methods of forming the electronic apparatus include HfSiON for use in a variety of electronic systems. In various embodiments, conductive material is coupled to a dielectric containing HfSiON, where such conductive material may include one or more monolayers of titanium nitr...

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Bibliographic Details
Main Authors FORBES LEONARD, AHN KIE Y
Format Patent
LanguageEnglish
Published 06.11.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Electronic apparatus and methods of forming the electronic apparatus include HfSiON for use in a variety of electronic systems. In various embodiments, conductive material is coupled to a dielectric containing HfSiON, where such conductive material may include one or more monolayers of titanium nitride, tantalum, or combinations of titanium nitride and tantalum.
Bibliography:Application Number: US201414335453