Tunnel Junction Fabrication

A method for fabricating a tunnel junction includes depositing a first electrode on a substrate, depositing a wetting layer having a thickness of less than 2 nm on the first electrode, using atomic layer deposition (ALD) to deposit an oxide layer on the wetting layer, and depositing a second electro...

Full description

Saved in:
Bibliographic Details
Main Authors MOYERMAN STEPHANIE, KEATING BRIAN
Format Patent
LanguageEnglish
Published 23.10.2014
Subjects
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRICITY
PHYSICS
Online AccessGet full text

Cover

More Information
Summary:A method for fabricating a tunnel junction includes depositing a first electrode on a substrate, depositing a wetting layer having a thickness of less than 2 nm on the first electrode, using atomic layer deposition (ALD) to deposit an oxide layer on the wetting layer, and depositing a second electrode on the oxide layer. The wetting layer and the oxide layer form a tunnel barrier, and the second electrode includes a superconductor.
Bibliography:Application Number: US201414257898