SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (...

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Bibliographic Details
Main Authors DONKERS JOHANNES, VAN DER SCHAAR CECILIA, BROEKMAN HANS, HEIL STEPHAN, DE KEIJSER MARK
Format Patent
LanguageEnglish
Published 16.10.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (30) on the metal. A method of manufacturing such a semiconductor device is also disclosed.
Bibliography:Application Number: US201414249108