LOW ENERGY COLLIMATED ION MILLING OF SEMICONDUCTOR STRUCTURES

A method of delayering a surface of a semiconductor structure may include applying a voltage in the range of about 50 eV to less than 300 eV to an inductively coupled Argon ion source operating at a radio frequency. A collimated ion beam incident on the surface of the semiconductor structure may be...

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Bibliographic Details
Main Author KANE TERENCE L
Format Patent
LanguageEnglish
Published 02.10.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of delayering a surface of a semiconductor structure may include applying a voltage in the range of about 50 eV to less than 300 eV to an inductively coupled Argon ion source operating at a radio frequency. A collimated ion beam incident on the surface of the semiconductor structure may be generated, from the Argon ion source, for the planar removal of layers of the surface. A structural material underlying the surface of the semiconductor structure is exposed using an end-point detector based on the planar removal of the layers.
Bibliography:Application Number: US201313851148