SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

A semiconductor device includes a first source/drain region and a second source/drain region disposed in an active region of a semiconductor substrate, and a gate structure crossing the active region and disposed between the first and second source/drain regions, the gate structure including a gate...

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Bibliographic Details
Main Authors MIN JI-YOUNG, BAEK SUNG-KWEON, NAM GAB-JIN, CHUNG EUN-AE, KIM JIN-SOAK
Format Patent
LanguageEnglish
Published 02.10.2014
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Summary:A semiconductor device includes a first source/drain region and a second source/drain region disposed in an active region of a semiconductor substrate, and a gate structure crossing the active region and disposed between the first and second source/drain regions, the gate structure including a gate electrode having a first part and a second part on the first part, the gate electrode being at a lower level than an upper surface of the active region, an insulating capping pattern on the gate electrode, a gate dielectric between the gate electrode and the active region, and an empty space between the active region and the second part of the gate electrode.
Bibliography:Application Number: US201414167053