NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

• Main Authors: SATO MITSURU, KATO RYU, KATSUMATA RYOTA, KITO MASARU, KITAZAKI SOICHIRO
• Format: Patent
• Language: English
• Published: 25.09.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According one embodiment, a nonvolatile semiconductor memory device, includes: a stacked body, and each of a plurality of electrode layers and each of a plurality of insulating layers being stacked alternately in the a stacked body; a first interlayer insulating film on the stacked body; a gate electrode on the first interlayer insulating film; a second interlayer insulating film on the gate electrode; a semiconductor layer extended from an upper end of the second interlayer insulating film to a lower end of the stacked body; a first insulating film between the semiconductor layer and each of the plurality of electrode layers; and a second insulating film between the semiconductor layer and the gate electrode, a thickness of the semiconductor layer provided above an upper end of the gate electrode being thicker than a thickness of the semiconductor layer provided below the upper end of the gate electrode.