SILICON-NITRIDE-CONTAINING INTERLAYER OF GREAT HARDNESS

• Main Authors: UIBEL KRISHNA, WORTHEY DAVID W
• Format: Patent
• Language: English
• Published: 18.09.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; BLASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FURNACES; FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; HEATING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; KILNS; LIGHTING; MECHANICAL ENGINEERING; METALLURGY; OPEN SINTERING OR LIKE APPARATUS; OVENS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; REFINING BY ZONE-MELTING OF MATERIAL; RETORTS; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; WEAPONS

The invention relates to a shaped body comprising a substrate with a firmly adhering separating layer, wherein the separating layer comprises 92-98 wt. % silicon nitride (Si3N4) and 2-8 wt. % silicon dioxide (SiO2) and wherein the separating layer has a total oxygen content of 8 wt. % and a hardness of at least 10 HB 2.5/3 according to DIN EN ISO 6506-1. The invention further relates to a process for producing such a shaped body, a coating suspension for use in such a process and the use of a shaped body according to the invention in the field of corrosive nonferrous metal melts.