SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the int...

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Bibliographic Details
Main Authors KU JAUN, JANG SE-AUG, LEE SEUNG-RYONG, YANG HONG-SEON
Format Patent
LanguageEnglish
Published 11.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the inter-layer dielectric layer.
Bibliography:Application Number: US201414282978