SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

• Main Authors: KUBO SHUNJI, KASAOKA TATSUO, HACHISUKA ATSUSHI, AMO ATSUSHI
• Format: Patent
• Language: English
• Published: 11.09.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A technique for enhancing the performance of a memory- and logic-equipped semiconductor device is provided. The semiconductor device comprises a semiconductor substrate, and insulating layer on the semiconductor substrate, a plurality of contact plugs in the insulating layer, and an insulating layer where capacitors, a plurality of contact plugs, barrier metal layers and copper interconnections are formed. Source/drain regions in the upper surface of the semiconductor substrate are electrically connected to the copper interconnections. One of adjacent source/drain regions in the upper surface of the semiconductor substrate is electrically connected to the copper interconnection, while the other is electrically connected to the capacitor.