Backside CMOS Compatible BioFET with No Plasma Induced Damage

• Main Authors: LIU YI-SHAO, CHENG CHUN-REN, CHANG YI-HSIEN, CHENG CHUN-WEN, CHEN CHING-RAY, LAI FEI-LUNG
• Format: Patent
• Language: English
• Published: 11.09.2014
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.