METHODS FOR OPTICAL PROXIMITY CORRECTION IN THE DESIGN AND FABRICATION OF INTEGRATED CIRCUITS
A method of manufacturing an optical lithography mask includes providing a patterned layout design comprising a plurality of polygons, correcting the patterned layout design using optical proximity correction (OPC) by adjusting widths and lengths of one or more of the plurality of polygons, to gener...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
07.08.2014
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Subjects | |
Online Access | Get full text |
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Summary: | A method of manufacturing an optical lithography mask includes providing a patterned layout design comprising a plurality of polygons, correcting the patterned layout design using optical proximity correction (OPC) by adjusting widths and lengths of one or more of the plurality of polygons, to generate a corrected patterned layout design, converting the corrected patterned layout design into a mask writer-compatible format, to generate a mask writer-compatible layout design comprising the plurality of polygons, and biasing each polygon in the plurality of polygons with a bias that accounts for large-scale density values of the patterned layout design, to generate a biased, mask writer-compatible layout design. |
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Bibliography: | Application Number: US201313757286 |