METHOD OF FORMING PHOTORESIST STRUCTURE

A method for forming a photoresist structure is provided The method includes the step of forming a photoresist layer on a substrate, the step of exposing a portion of the photoresist layer to form an exposed portion of the photoresist layer, and the step of removing the photoresist layer except the...

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Bibliographic Details
Main Authors HSU HUNG-LUN, WU MU-GI, HSIAO KAI-WEN, CHEN HSIEN-YEH, HSIEH CHIEHN
Format Patent
LanguageEnglish
Published 07.08.2014
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A method for forming a photoresist structure is provided The method includes the step of forming a photoresist layer on a substrate, the step of exposing a portion of the photoresist layer to form an exposed portion of the photoresist layer, and the step of removing the photoresist layer except the exposed portion with a solvent, so as to form the photoresist structure, wherein the photoresist layer has a polymer having a structure represented by formula (I). The method of the present invention can generate a photoresist with an even thickness on devices with complex geometries or three-dimensional substrates. Thus, it can be applied to tissue engineering scaffolds, three-dimensional cell cultivation system and novel bio-microelectromechnical elements.
Bibliography:Application Number: US201314023069