THROUGH SILICON VIA DEVICE HAVING LOW STRESS, THIN FILM GAPS AND METHODS FOR FORMING THE SAME

Aspects of the present invention generally relate to approaches for forming a semiconductor device such as a TSV device having a "buffer zone" or gap layer between the TSV and transistor(s). The gap layer is typically filled with a low stress, thin film fill material that controls stresses...

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Bibliographic Details
Main Authors THANGARAJU SARASVATHI, WONG CHUN YU, LIU HUANG
Format Patent
LanguageEnglish
Published 24.07.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Aspects of the present invention generally relate to approaches for forming a semiconductor device such as a TSV device having a "buffer zone" or gap layer between the TSV and transistor(s). The gap layer is typically filled with a low stress, thin film fill material that controls stresses and crack formation on the devices. Further, the gap layer ensures a certain spatial distance between TSVs and transistors to reduce the adverse effects of temperature excursion.
Bibliography:Application Number: US201313744551