BACKSIDE METAL GROUND PLANE WITH IMPROVED METAL ADHESION AND DESIGN STRUCTURES

A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further include...

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Main Authors DUNBAR, III GEORGE A, STAMPER ANTHONY K, BURNHAM JAY S, CORBIN DAMYON L, GAMBINO JEFFREY P, HALL JOHN C, MCAVEY, JR. KENNETH F, MUSANTE CHARLES F
Format Patent
LanguageEnglish
Published 10.07.2014
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV.
Bibliography:Application Number: US201313738541