METHODS OF MANUFACTURING NAND FLASH MEMORY DEVICES

A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the r...

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Main Authors KWAK DONG-HWA, HWANG BYUNG-JUN, LIM NAM-SU, JIN SO-WI, PARK JANG-HO, PARK JAE-KWAN
Format Patent
LanguageEnglish
Published 12.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction
Bibliography:Application Number: US201414182329