METHODS OF SELECTIVELY REMOVING A SUBSTRATE MATERIAL AND RELATED SEMICONDUCTOR STRUCTURES

A method for selective removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the subst...

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Bibliographic Details
Main Authors BOSSLER MARK A, GAMBEE CHRISTOPHER J, PARKER RANDALL S, GANDHI JASPREET S
Format Patent
LanguageEnglish
Published 12.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for selective removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SF6 without forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.
Bibliography:Application Number: US201213712699