MEASUREMENT OF CMOS DEVICE CHANNEL STRAIN BY X-RAY DIFFRACTION

A direct measurement of lattice spacing by X-ray diffraction is performed on a periodic array of unit structures provided on a substrate including semiconductor devices. Each unit structure includes a single crystalline strained material region and at least one stress-generating material region. For...

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Main Authors ADAM THOMAS N, MURRAY CONAL E, HARLEY ERIC C, PINTO TERESA L, HOLT JUDSON R, MADAN ANITA, BEDELL STEPHEN W
Format Patent
LanguageEnglish
Published 12.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A direct measurement of lattice spacing by X-ray diffraction is performed on a periodic array of unit structures provided on a substrate including semiconductor devices. Each unit structure includes a single crystalline strained material region and at least one stress-generating material region. For example, the single crystalline strained material region may be a structure simulating a channel of a field effect transistor, and the at least one stress-generating material region may be a single crystalline semiconductor region in epitaxial alignment with the single crystalline strained material region. The direct measurement can be performed in-situ at various processing states to provide in-line monitoring of the strain in field effect transistors in actual semiconductor devices.
Bibliography:Application Number: US201414179035