CONFINED RESISTANCE VARIABLE MEMORY CELLS AND METHODS

Methods, devices, and systems associated with resistance variable memory device structures are described herein. In one or more embodiments, a method of forming a confined resistance variable memory cell structure includes forming a resistance variable material such that a first unmodified portion o...

Full description

Saved in:
Bibliographic Details
Main Author BIAN ZAILONG
Format Patent
LanguageEnglish
Published 05.06.2014
Subjects
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:Methods, devices, and systems associated with resistance variable memory device structures are described herein. In one or more embodiments, a method of forming a confined resistance variable memory cell structure includes forming a resistance variable material such that a first unmodified portion of the resistance variable material contacts a bottom electrode and a second unmodified portion of the resistance variable material contacts a top electrode.
Bibliography:Application Number: US201314083069