METHOD OF FORMING SEMICONDUCTOR FINS
An improved method of forming semiconductor fins is disclosed. Cavities are formed by etching a semiconductor substrate to a first depth. A surface treatment layer such as a nitride layer is then deposited or formed on the interior surface of the cavities. The etch then continues deeper, while the s...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
29.05.2014
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Subjects | |
Online Access | Get full text |
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Summary: | An improved method of forming semiconductor fins is disclosed. Cavities are formed by etching a semiconductor substrate to a first depth. A surface treatment layer such as a nitride layer is then deposited or formed on the interior surface of the cavities. The etch then continues deeper, while the surface treatment layer protects the upper portion of the cavities. |
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Bibliography: | Application Number: US201213688258 |