METHOD OF FORMING SEMICONDUCTOR FINS

An improved method of forming semiconductor fins is disclosed. Cavities are formed by etching a semiconductor substrate to a first depth. A surface treatment layer such as a nitride layer is then deposited or formed on the interior surface of the cavities. The etch then continues deeper, while the s...

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Bibliographic Details
Main Authors CHOI DAE-HAN, MAENG CHANG HO, YANG DAE GEUN
Format Patent
LanguageEnglish
Published 29.05.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An improved method of forming semiconductor fins is disclosed. Cavities are formed by etching a semiconductor substrate to a first depth. A surface treatment layer such as a nitride layer is then deposited or formed on the interior surface of the cavities. The etch then continues deeper, while the surface treatment layer protects the upper portion of the cavities.
Bibliography:Application Number: US201213688258