SEMICONDUCTOR DEVICES INCLUDING VARIABLE WIDTH FLOATING GATES, AND APPARATUS FOR PROCESSING SUBSTRATE

A semiconductor device includes a substrate including an active region defined by a device isolation pattern and a floating gate on the active region. The floating gate includes an upper portion, a lower portion having a width greater than a width of the upper portion, and a step-difference portion...

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Bibliographic Details
Main Authors KIM BYEONGHOON, SHIN SANG BONG, KIM HYOJOONG, KIM IN-YOUNG, OH SONGHA
Format Patent
LanguageEnglish
Published 22.05.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a substrate including an active region defined by a device isolation pattern and a floating gate on the active region. The floating gate includes an upper portion, a lower portion having a width greater than a width of the upper portion, and a step-difference portion between the upper portion and the lower portion. A dielectric pattern is on the floating gate, and a control gate is on the dielectric pattern. The lower portion of the floating gate has a height of about 4 nm or more.
Bibliography:Application Number: US201313966511