POWER SEMICONDUCTOR MODULE

A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, w...

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Main Authors TADA KAZUHIRO, KOBAYASHI TOMOHIRO, NAKAYAMA YASUSHI, OI TAKESHI, MIKI TAKAYOSHI, IDAKA SHIORI, HASEGAWA SHIGERU, NAKASHIMA YUKIO
Format Patent
LanguageEnglish
Published 22.05.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region.
Bibliography:Application Number: US201214131581