Passivation Layer and Method of Making a Passivation Layer
A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-...
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Main Authors | , , , , , , , , , , |
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Format | Patent |
Language | English |
Published |
01.05.2014
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Subjects | |
Online Access | Get full text |
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Summary: | A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen. |
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Bibliography: | Application Number: US201213664311 |