Passivation Layer and Method of Making a Passivation Layer

A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-...

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Main Authors KRAXNER WELLENZOHN ELFRIEDE, MAIER HUBERT, SCHOENHERR HELMUT, MATOY KURT, KRENN CHRISTIAN, SCHLEMITZ SILVANA FISTER, STEINBRENNER JUERGEN, HOECKELE UWE, BRUNNER CHRISTOPH, KAHN MARKUS, GIETLER HERBERT
Format Patent
LanguageEnglish
Published 01.05.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.
Bibliography:Application Number: US201213664311