SYSTEM AND METHOD FOR FORMING AN ALUMINUM FUSE FOR COMPATIBILITY WITH COPPER BEOL INTERCONNECT SCHEME

A semiconductor fuse device and a method of fabricating the fuse device including a last metal interconnect layer including at least two discrete metal conductors, an inter-level dielectric layer deposited over the last metal interconnect layer and the at least two discrete metal conductors, a thin...

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Main Authors STAMPER ANTHONY K, DAUBENSPECK TIMOTHY H, ANDERSON FELIX P, HAYES TIMOTHY S, MCDEVITT THOMAS L, LETOURNEAU DONALD R, GAMBINO JEFFREY P
Format Patent
LanguageEnglish
Published 17.04.2014
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Summary:A semiconductor fuse device and a method of fabricating the fuse device including a last metal interconnect layer including at least two discrete metal conductors, an inter-level dielectric layer deposited over the last metal interconnect layer and the at least two discrete metal conductors, a thin wire aluminum fuse connecting the at least two discrete metal conductors, and a fuse opening above the aluminum fuse.
Bibliography:Application Number: US201314141559