Phase Change Memory With Threshold Switch Select Device
An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
17.04.2014
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Subjects | |
Online Access | Get full text |
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Summary: | An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory. |
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Bibliography: | Application Number: US201314132286 |