Nearly Buffer Zone Free Layout Methodology
The present disclosure relates to a layout arrangement and method to minimize the area overhead associated with a transition between a semiconductor device array and background features. A nearly buffer zone free layout methodology is proposed, wherein an array of square unit cells with a first patt...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
17.04.2014
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Subjects | |
Online Access | Get full text |
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Summary: | The present disclosure relates to a layout arrangement and method to minimize the area overhead associated with a transition between a semiconductor device array and background features. A nearly buffer zone free layout methodology is proposed, wherein an array of square unit cells with a first pattern density value is surrounded by background features with a second pattern density value. A difference between the first pattern density value and second pattern density value results in a density gradient at an edge of the array. Unit cells on the edge of the array which are impacted by a shape tolerance stress resulting from the density gradient are identified and reconfigured from a square shape aspect ratio to a rectangular shape aspect ratio with along axis of the unit cell oriented in a direction parallel to the variation induced shape tolerance stress to alleviate the variation. |
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Bibliography: | Application Number: US201313745913 |